Study of GaAs epitaxial growth on Si substrates modified by focused ion beams

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

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Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to...

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

of GaAs on Si H. Y. Xu, Y. N. Guo, Y. Wang, J. Zou, J. H. Kang, Q. Gao, H. H. Tan, and C. Jagadish Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, Queensland 4072, Australia Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Aust...

Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.

Epitaxial growth of vertical GaAs nanowires on Si(111) substrates is demonstrated by metal-organic chemical vapor deposition via a vapor-liquid-solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth alloying temperature, and growth temperature are all crucial to vertical epitaxial growth. Nanowire growth rate and morphology can be well controlled by the g...